Gate Driver Family: DI4A-05W21A
- Lentark Electronics

- Apr 17, 2020
- 2 min read

DI4A-05W21A Isolated Gate Driver
DI4A-05W21A has been introduced as a new member of the gate driver family.
The module is a two-channel isolated gate driver designed for MOSFET and IGBT switching applications. It provides 4 A peak gate charge current and 6 A peak gate discharge current, making it suitable for applications where strong gate driving capability is required.
Programmable Dead-Time Support
One of the key features of the DI4A-05W21A is its programmable dead-time capability.
Dead-time is important in complementary switching structures such as half-bridge and full-bridge circuits. By defining a controlled delay between switching transitions, the module helps support safer operation and reduces the risk of shoot-through conditions.
Flexible Output Configuration
The module can be configured for different gate driver structures.
Its two output channels can be used as two low-side drivers or configured for half-bridge driver applications. This flexibility makes the module useful in power electronics development, driver testing and prototype switching circuits.
UCC21520-Based Driver Structure
The DI4A-05W21A uses the UCC21520 isolated gate driver integrated circuit.
This driver structure provides low propagation delay, low pulse width distortion and high common-mode transient immunity. These characteristics are important in switching systems where timing accuracy, noise immunity and isolation performance directly affect system reliability.
Typical Application Areas
DI4A-05W21A can be used in applications that require isolated MOSFET or IGBT gate driving.
Typical application areas include:
· MOSFET and IGBT gate driver tests
· Half-bridge driver circuits
· Full-bridge switching circuits
· Low-side driver applications
· Power electronics development
· Inverter control experiments
· Motor control prototypes
· R&D and laboratory test setups
Conclusion
DI4A-05W21A expands the gate driver family with a two-channel isolated gate driver structure. With 4 A gate charge, 6 A gate discharge, programmable dead-time support and flexible output configuration, it provides a practical driver platform for MOSFET and IGBT switching applications.



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