DI30A-25W10-NA – 30 A Isolated Gate Driver for IGBT and SiC MOSFETs
DI30A-25W10-NA is a single-channel isolated gate driver module with 30 A peak source and 45 A peak sink current capability. It supports high-side or low-side gate-drive operation and is suitable for driving IGBTs and SiC MOSFETs rated up to 1200 V. The module includes integrated protection features such as PWM interlock, UVLO, DESAT, Active Miller Clamp, negative bias support, gate overvoltage protection, and gate transient protection for demanding industrial and power electronics applications.
- Output capabilities:
- High-side or low-side drive
- Gate peak current: 30 A source / 45 A sink
- Gate drive voltage: 13 V – 20 V
- Drives IGBTs and SiC MOSFETs up to 1200 V
- Functional protection features:
- PWM interlock
- UVLO: 12 V
- DESAT: 7.4 V / 2.7 µs
- Active Miller clamp: 10 A
- Negative bias: down to −9 V
- Gate overvoltage protection: VGATE > 20 V
- Gate surge protection: VGATE > VDRIVE + 0.75 V
- Advanced insulation:
- Common-mode transient immunity: >150 V/ns
- Operating voltage (max.): 1500 VRMS
- Repetitive peak voltage (max.): 2100 V
- Logic section ESD protection: 8 kV
- Logic inputs and outputs:
- Supply voltage: 3 V – 5.5 V
- Power-good output
- Isolated PWM output for analog sensor signal
- Overcurrent and short-circuit fault output
